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ESY-10 S - Technical Highlights
- Single or 2-Tube Combination-Furnace with Vertical LPE and Annealing Quartz Tube
- 3 Heating Zones for epitaxy and 1 independent heating Zone for Hg-source
- Hg-Vapor-Source inside Furnace Tube
- Temperatures up to 750°C
- Temperature Regulation Accuracy: ± 0.5 °C
- Suitable for Wafers up to 49cm 2
- 4 Wafers per Epitaxial Process
- Perfect Layer Growth
- Easy removing of Solid Melt after Process
- Wafer Surface Protection before and after Epi-Growth
- Fully automatic Computer-Controlled Processing
- Data-Logging of all Process-Parameters
- Closed loading glove box with N2-atmosphere
